Room ECED-2 : 306
Email arjunanms@nitc.ac.in
Office Phone 8225054575
Areas Of Interest Phase change photonic memory, Optoelectronic devices, Biophotonics and Biomedical Instrumentation

Peer-reviewed Journal Publications

  1.  M. S. Arjunan.; Mondal, A.; Das, A.; Adarsh, K. V.; Manivannan, A. Multilevel Accumulative Switching Processes in Growth-Dominated AgInSbTe Phase Change Material. Opt. Lett.,  2019, 44 (12), 3134–3137.https://doi.org/10.1364/OL.44.003134
  2.  Amit Kumar Rana, Aneesh J Yogendra Kumar, M. S. Arjunan, K. V. Adarsh,  Somaditya Sen, and Parasharam M. Shirage,Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods. Appl. Phys. Lett. 2015, 107, 231907.
  3.  M.S. Arjunan, Anirban Mondal, D. Suresh, K.V. Adarsh, and M. Anbarasu, Impact of crystallization in multilevel switching of Ag5In5Sb60Te30 and Ge2Sb2Te5  phase change materials. J. Phys. D: Appl. Phys. 2020, 53 495303. https://doi.org/10.1088/1361-6463/abb50c
  4.  M.S. Arjunan, Anirban Mondal, Nishant saxena, Tejendar, K.V. Adarsh, and M. Anbarasu, High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications. physica status solidi– Rapid Research Letters. 2020, 202000354, 1-5. https://doi.org/10.1002/pssr.202000354
  5.   M.S. Arjunan, D. Suresh, Anirban Mondal, K.V. Adarsh, and M. Anbarasu, Realization of 4-bit Multilevel Switching in Ge2Sb2Te5 and Ag5In5Sb60Te30 in the Visible Region, ACS Applied Electronic materials 2020, 2, 12, 3977–3986. https://doi.org/10.1021/acsaelm.0c00809
  6.  M.S. Arjunan, D. Suresh, and M. Anbarasu, Multilevel switching in Phase Change Photonic Memory Devices. physica status solidi– Rapid Research Letters. (Invited Review) 2021, 2100291, 1-13. https://doi.org/10.1002/pssr.202100291.

 

International Conference proceedings

 

  1. M.S. Arjunan, Anirban Mondal, Amlan Das, K.V. Adarsh, and M. Anbarasu, Investigation of growth and nucleation process in the amorphous Ag5In5Sb60Te30 phase change material, International Conference On Laser Deposition (iCOLD) ,2017 (IIT Madras).
  2.  M.S. Arjunan, Anirban Mondal, Amlan Das, K.V. Adarsh, and M. Anbarasu, Non-volatile Multilevel set operations in GeSb6 phase change material for photonic memory applications, International Conference On Fiber Optics and Photonics ,2018 (IIT Delhi).
  3. M.S. Arjunan, Suresh Durai, F. Bellarmine, Tejendra Dixit, M S Ramachandra Rao,and Anbarasu Manivannan, Exploring Phase Segregation in Ge 15Sb 85 Phase Change Material using X ray photoelectron and Raman Spectroscopic studies, 2021 3rd Indian Materials Conclave (IndMac) and 32nd Annual General Meeting of MRSI ” held between 20 23 December, 2021 (IIT Madras).
  4. M.S. Arjunan, Roberto Pagano, Giovanni Maira, Salvatore Lombardo, Preliminary experimental investigation of the spatial resolution of a 156 channels fNIRs system with Silicon Photomultiplier, Optica Biophotonics Congress: Optics in the Life Sciences held between 24 – 27 April 2023 (Vancouver, Canada).

 

https://scholar.google.com/citations?user=PDHNjEQAAAAJ&hl=en

PhD: Indian Institute of Technology Indore (2021)

M.Tech : Amrita Vishwa Vidyapeetham University (2014)

B. Tech : University of Calicut (2011)

1. Postdoctoral Researcher : Istituto per la Microelettronica e Microsistemi (CNR-IMM), Zona Industriale, Ottava Strada, 5,  95121 Catania, Italy (June 2022 to July 2023).

2. Research Associate : Discipline of Electrical Engineering, Indian Institute of Technology Madras (April 2021 to May 2022)

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